power f-mos fets 2SK2339 2SK2339 silicon n-channel power f-mos n features l avalanche energy capability guaranteed l low on-resistance l no secondary breakdown l low-voltage drive n applications l non-contact relay l solenoid drive l motor drive l control equipment l switching mode regulator n absolute maximum ratings (tc = 25?c) parameter drain-source breakdown voltage gate-source voltage drain current dc pulse avalanche energy capability allowable power t c = 25?c dissipation ta= 25?c channel temperature storage temperature symbol v dss v gss i d i dp eas * p d t ch t stg rating 8010 15 10 20 62.5 30 1.3 150 C55 to +150 unit v v a a mj w ?c ?c n electrical characteristics (tc = 25?c) parameter drain-source cut-off current gate-source leakage current drain-source breakdown voltage gate threshold voltage drain-source on-resistance forward transadmittance diode forward voltage reverse recovery time reverse recovery charge input capacitance output capacitance feedback capacitance turn-on time fall time turn-off time (delay time) channel-case heat resistance channel-atmosphere heat resistance symbol i dss i gss v dss v th r ds(on) 1 r ds(on) 2 | y fs | v dsf t rr q rr c iss c oss c rss t on t f t d(off) r th(ch-c) r th(ch-a) condition v ds = 70v, v gs = 0 v ds = 0, v gs =15v i d =1ma, v gs = 0 v ds =10v, i d =1ma v gs =10v, i d = 5a v gs = 4v, i d = 5a v ds =10v, i d = 5a i dr =10a, v gs = 0 l=230 h, v dd = 30v, v gs = 0 i dr =10a, di/dt= 80a/ s v ds =10v, v gs = 0, f= 1mhz v dd = 30v, i d = 5a v gs =10v, r l = 6 w min 70 1 3 typ 150 230 5.5 0.55 2.2 85 250 20 0.5 0.9 1.9 max 10 10 90 2.5 230 370 C1.8 4.2 96 unit a a v v m w m w s v s s pf pf pf s s s ?c/w ?c/w unit : mm 1 : gate 2 : collector 3 : emitter n type package * l= 5mh, i l = 5a, 1 pulse n equivalent circuit 8.5 0.2 6.0 0.5 10.0 0.3 10.5min. 2.0 1.5 0.1 1.5max. 0.8 0.1 5.08 0.5 2.54 0.3 1.1max. 0.5max. 1.0 0.1 3.4 0.3 2 13 g s d
r ds(on) C i d ias C l-load area of safe operation (aso) p d C ta i d Cv ds i d C v gs v th C t c r ds(on) C v gs | y fs | C i d power f-mos fets 2SK2339 0.1 0.1 1 10 100 0.5 5 50 0.3 3 30 0.2 2 20 110 0.5 5 0.3 3 l-load l ( mh ) abalanche current i as ( a ) t c =25?c 62.5mj 0 600 500 400 300 200 100 010 gate-source voltage v gs ( v ) drain-source on-resistance r ds (on) ( m ) 2468 t c =25?c i d =5a i d =2.5a drain-source voltage v ds ( v ) drain current i d ( a ) 0 14 12 10 8 6 4 2 024681012 3v v gs =10v t a =25?c 4v 5v 4.5v 3.5v p d =30w 0 1 2 3 4 5 6 7 010 8 6 4 212 drain current i d ( a ) forward transadmittance | y fs | ( s ) v ds =10v ta=25?c 0 100 200 300 400 500 600 024681012 drain current i d ( a ) drain-source on-resistance r ds(on) ( ) (1)v gs =4v (2)v gs =10v t c =25?c (1) (2) 18 16 14 12 10 8 6 4 2 0 0 246 10 8 gate-source voltage v gs ( v ) drain current i d ( a ) t c =25?c 0 10 20 30 40 50 60 0 40 80 120 160 20 60 100 140 ambient temperature ta ( ?c ) allowable power dissipation p d ( w ) (1) (2) (1) t c =ta (2) without heat sink (p d =1.3w) 0.1 1 1 10 0.3 3 30 100 10 550 3 30 100 drain-source voltage v ds ( v ) drain current i d ( a ) non repetitive pulse t c =25?c i dp dc i d t=100ms t=1ms t=10ms t=100ms 0 1 2 3 4 5 6 0 25 50 75 100 125 150 case temperature t c ( ?c ) gate threshold voltage v th ( v ) v ds =10v i d =1ma
c iss, c oss, c rss C v ds t d(off), t r, t on C i d v ds, v gs C q g power f-mos fets 2SK2339 i sd C v sd r th C t p 2000 0 100 20 40 60 80 1000 500 200 100 50 5 20 10 drain-source voltage v ds ( v ) f=1mhz t c =25?c input capacitance, output capacitance, c iss , c oss , c rss (p f ) feedback capacitance coss ciss crss 0.05 20 0 2.0 diode forward voltage v sd ( v ) souce-drain current i sd (a) 0.5 1.0 1.5 10 5 2 0.5 0.2 3 0.3 1 0.1 v gs =0 t c =25?c 0 3.0 2.5 2.0 1.5 1.0 0.5 024681012 drain current i d ( a ) switching time t ( ms ) v dd =30v v gs =10v t c =25?c t d(off) t f t on 0.1 1 10 100 1000 10 ? 10 ? 10 ? 10 ? 11010 2 10 3 10 4 pulse width t p ( s ) thermal resistance r th ( ?c/w ) (1) (2) notes: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink 00 14 60 12 50 10 40 8 30 6 20 4 10 2 0 5 10 15 20 25 gate charge amount q g ( nc ) drain-source voltage v ds ( v ) gate-source voltage v gs ( v ) v gs v ds =30v v ds i d =10a ta=20?c v ds =40v v ds =50v
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